This week, TSMC introduced an improved version of its 16 nm process FinFET, which will be used in mass production in 2015. Also the world's largest contract chip maker, shared plans for the 10 nm technology FinFET.
Currently, TSMC and its customers are experimenting with production technology 16 nm FinFET (CLN16FF). The process is suitable for a commercial release of chips already in early 2015, but TSMC expects that most of its customers to pay attention to more efficient technology of 16 nm FinFET +.
Of the benefits of 16 nm FinFET + can distinguish improved by 15% compared to 16 nm FinFET performance schemes for the same power. In the case of a constant clock frequency circuit can consume 30% less energy relative to similar decisions made by the technology of 16 nm FinFET. Finally, 16 nm FinFET + offers performance increase by 40% relative to the 20-nm designs.
Interestingly, the first 15 solutions designed according to the norms of 16 nm FinFET +, will be transferred into production later this year, 45 more planned for next year. It was also reported that the process will be offered 16 nm FinFET Turbo, but this information is not confirmed.
Process 10 nm FinFET will be the third generation technology with vertical transistors and offer regular performance increase by 25% compared to 16 nm FinFET + at the same level of energy consumption, and increased packaging density of 2.2 times. Pilot production at 10 nm FinFET technology should start in the fourth quarter of 2015, TSMC commercial release schemes can be carried out in the 2016-2017 year.