According to the requirements of Samsung, it is necessary to create a technology that would combine traditional CMOS-process, FinFET-transistors and new materials of the III-V of the periodic table. First of all, it's a combination of gallium arsenide and indium. Such materials prevent leaks and cross-contamination must be applied to the buffer layer rather than directly on the substrate. It should be borne in mind that the group III-V allow you to create n-transitions to move the electrons, while for p-transitions of these materials of little use.
The developers are also involved in the practical side of the issue. The next step will be the release of elements using 30-nm process technology . The structure of transistors, by the way, a rather unique and involves the use of five vertical gates within each transistor. The electron mobility transistor with the gate of the elements of groups III-V as assessed in the prototype 2-3 fold compared to traditional silicon. The effect will be to increase with a decrease in process technology, where silicon will stop working. This is to be expected at lower production scale, 5 to 7 nm. All rights to the development, by the way, will be owned by Samsung. If developers will succeed, the company will be able to upgrade their factory for the production of semiconductors in the new environment. Related Products :
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