In recent days, TSMC company has published a series of press releases, which spoke about their victories on the base of technologies development for production of semiconductors. All new achievements of the company are primarily related to adaptation to the next process technology architectures, ARM.
Fresh press release, TSMC company unveiled plans for the transition to production of semiconductors with the norms of 10 nm using FinFET transistors. It is reported that the ARM and TSMC will apply all his past experience of cooperation, not later than the fourth quarter of 2015 to introduce the first digital project 10-nm FinFET transistors to build on 64-bit architectures, ARM. Such projects - tape-out - is the basis for the creation of masks, which are subsequently used for the production of semiconductors. It can be expected that the first 10-nm silicon experienced TSMC company will benefit not later than the second quarter of 2016. Somewhere at the same time, Intel promises to organize mass production of 10-nm semiconductor. TSMC thereby may reduce its backlog from Intel up to six months, which would be unprecedented in recent history.
An official document of TSMC company did not give any technical details about 10-nm FinFET process technology. Of previous publications it is known that in comparison with the process technology 16FinFET + 10FinFET process technology can enable us to raise productivity by 25% without increasing the consumption or reduce consumption by 45% without an increase in productivity. Transistor density in this case from one generation to increase by about 2.2 times.