The issue with the practical implementation of scanners with radiation of 13.5 nm (range EUV) has not been fully defined. Intel plans to release 10-nm and even 7-nm semiconductors using advanced 193-nm scanners. TSMC company admits that some of the critical layers of 10-nm solutions can be projected using EUV-scanners.
Obstacle to the transition to EUV-scanners has been and remains a relatively small power sources of radiation in the extreme ultraviolet. Pre-production samples scanners ASML NXE: 3300B upgraded to a radiation source 90 watts. The following year, these settings will be upgraded to version NXE: 3350B with the radiation source 125 watts. Ideally, the factories for mass production must be received by scanners radiation sources 250 watts. This will be achieved by 2016.
As reported, TSMC company in practice has proved that even scanners ASML NXE: 3300B with 90-watt power can handle the volume of commercial silicon substrates. During the day, one scanner NXE: 3300B could expose the substrate 1022. The previous record belonged to the company IBM, which per day processed on the same equipment 900 plates. Note scanner TSMC worked for only one day. Two days in a row, it would not stand, so to speak of a significant success for the implementation of EUV-equipment is not necessary.