another RRAM structure Proposed
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POSTER: computer news || ANOTHER RRAM STRUCTURE PROPOSED |
DATE:2015-08-16 |
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Resistive memory with cross and multi-layered structure is ready to be translated into a commercial product in the form of memory 3D XPoint by Intel and Micron. Scientists from the Institute of Rice offered another structure RRAM, which can be faster and denser than competing designs.  As a base material for a memory cell is provided nanoporous material of tantalum oxide. Conductive channels are formed in the porous material after application of the programming voltage to the electrodes, which displaces the oxygen molecules in the overlying layer to form a conductive filament of tantalum in the material. According to the developers, their version of RRAM memory is characterized by an extremely low leakage currents with the preservation of all basic characteristics of resistive memory - conditionally infinite number of programming cycles and high speeds. Related Products : | ||
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ANOTHER RRAM STRUCTURE PROPOSED |
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China SMIC bring RRAM memory to the commercial level (2016-03-15)
another RRAM structure Proposed (2015-08-16)
Sony and Micron showed a working sample of 16-Gbit RRAM (2014-12-24)
Crossbar submit a working technology for the production of superdense RRAM (2014-12-23)
RRAM will come with 11 nm technical process (2011-10-13)
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