In official press releases South Korean company Samsung announced the launch of the steepest memory type DRAM - chips in the standard HBM for renewed specifications. Unofficially updated memory HBM called HBM2. But in terms of JEDEC specifications - it is also the memory HBM, which may be important to read the slides to the plans from AMD or NVIDIA. Strictly speaking - HBM2 memory does not exist.
So, Samsung company has launched a four-layer (layer plus controller) memory chips HBM capacity of 4GB for improved specifications. This means that the overall exchange rate with HBM chip has doubled - up to 256 GB / s. It is seven times more than can give a modern GDDR5 memory volume of 4 gigabits at 9 Gbit / s contact (36 GB / s). Since the communication speed in terms of the contact less HBM - 2 Gbit / s, the energy efficiency of the new chip HBM in terms of the ratio of capacity is at much higher watt.
SK Hynix company, recall, currently commercially produces only 1-GB chip HBM with the exchange rate of 128 GB / s. Samsung is ready to offer HBM chip with four times more capacity. As you can see, the use of memory cards with HBM, based on the new specifications on the substrate with the graphics processor can accommodate 16 GB of memory. Also, it is easy to calculate that chip Samsung consists of four 8-Gbps crystals. During the year, the company promises to start the production of 8-GB chip HBM with improved specifications. Obviously, it would be a 8 layer chips using 8-Gbit layers.