Magnetoresistive memory or MRAM are Cheap, reliable, but there are serious scaling problems . The magnetic field did not play well with each other, which prevents increase the recording density in the neighboring cells.
However, developers still believe that MRAM type memory is an ideal non-volatile memory, which will replace all existing types of memory. It will be fast as the SRAM, dense as a NAND-flash and cheap as the ROM.
The proposed method for developers called "field-free magnetization reversal by spin-Hall effect and exchange bias" or, "polarity-reversible magnetization by the Hall effect and the exchange of the curve" or simply current bend. As follows from the description of the development, the state of the cell (magnetic bits) to quickly switch the current curve (flow of electrons), which occurs after the current channel signal processing weak pulses.Current curve occurs as a manifestation of the Hall effect, when the change in the rotation of the electron spin direction of the electrons causes the deflected counter-rotating moments.
The ability to influence the electron spins weak pulses appeared after receiving special antiferromagnetic material, freezing the magnetic field in the cell. Alas, the developers have used this combination of platinum and iridium, which makes unjustified commercialization of technologies at this stage. However, there is hope that the development will be brought to the industrial implementation within three or five years. Related Products :
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