TSMC and IBM shared details about the 7-nm process technology

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POSTER: computer news   ||    TSMC AND IBM SHARED DETAILS ABOUT THE 7-NM PROCESS TECHNOLOGY	DATE:2016-12-07
Today, the final day of the annual conference of International Electron Devices Meeting (IEDM 2016).  At this event, developers and semiconductor manufacturers usually share something interesting and promising.  So, companies TSMC and IBM each separately reported on the achievements in the development of 7-nm process technology.  At the same time IBM announced the achievement of a record in reducing the FinFET transistor sizes, and TSMC company spoke about the creation of the world's smallest 6-transistor SRAM cell.  In addition, each company is confident in the commercial use of EUV-lithography at the production of 7-nm semiconductors. Above the picture shows a diagram of a conventional transistor.  IBM record is a skilled 7-nm chip released using of EUV-lithography for critical layers, a step of the contact group 44/48 nm (contacted poly pitch or contacted gate pitch).  Previously, the smallest step CGP was the experienced 10-nm Intel chips, and it was equal to 56 nm.  Further, a skilled 7 nm chip IBM distance between the contacts of the first level of metallization is 36 nm (metallization pitch), and the distance between the fins (FIN) transistors - 27 nm.  Each transistor has an open contact 10 nm window (contact opening / physical gate length) and total gate length of 15 nm (gate length / printed gate length). As mentioned above, to create a critical layers skilled 7-nm chip, IBM-use of EUV scanners.  Fin equal to 27 nm, was made possible thanks to the fourfold projection.  The gates were created using a double projection.  Instead of tungsten in cobalt IBM transistors used to increase the strength of semiconductor structures. TSMC's company, as already mentioned above, told of the tightest in the industry 6-transistor 7 nm SRAM memory cell - just 0.027 mm2.  Compared with the process technology 16 FF + linear density increased in 3.3 times.  In this cell the speed with equal consumption increased by 40%, or a decrease in consumption at equal productivity decreased by 65%.  Note the memory cell is fully functional, with a decrease in supply to 0.5 V. Related Products :

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