Semiconductor Manufacturing International Corp. (SMIC) Chinese company's start off the assembly line of long-term non-volatile memory ReRAM or resistive RAM . The young US company Crossbar, which in March last year, has licensed the technology to produce ReRAM to this Chinese manufacturer. ReRAM memory promises to be much faster than NAND-flash, promising to decrease the delay in milliseconds handling units to 20-12 nanoseconds, and 20 times less consumption. Such outstanding ReRAM performance can allow it to replace the NAND-memory in all areas of its application. One problem, ReRAM has not yet reached the stage of commercial production.
Crystals memory ReRAM, which began producing SMIC company, are experienced silicon. It blocks a capacity of 8 Mbps, intended for embedded applications. Such blocks promise to appear as part of microcontrollers and single-chip assemblies. Produce solutions with ReRAM on board preparing company SMIC. It remains only to be found wanting. In the future, the company expects to see Crossbar memory ReRAM as an independent storage for all kinds of storage devices. Crossbar Companies easier to sell the license to produce ReRAM memory and, according to its representatives, interested in technology, many major chip manufacturers.
It remains to recall that ReRAM company Crossbar memory cell is a sandwich of two silver electrodes with an area of amorphous silicon between them. Under the current exposure in silicon begins to grow strands of silver ions, creating a certain conductivity between the electrodes. Reverse polarity voltage destroys conductivity and voltage from a low value only reads the cell. Such a cell also requires a separate operation for erasing data, and the number of overwrite cycles reaches 100 thousands, may be increased.
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