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 - ZTE announces new Android-smartphone Nubia with dual camera April 6 - Intel introduced the FinFET process technology with the norms of 10 nm and 22 nm - Core i7-7700K at 7.1 GHz was able to rise to second place in SuperPI 32M - HTC U will receive a touch frame Edge Sense and Snapdragon 835 -


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POSTER: computer news   ||    ZTE ANNOUNCES NEW ANDROID-SMARTPHONE NUBIA WITH DUAL CAMERA APRIL 6

DATE:2017-03-29

ZTE is working on a new representative of  Nubia series.  It will be presented next week.

Next Thursday, April 6, at 14:00 Beijing time , ZTE will hold a special event in China dedicated to the announcement of a new device under the sub-brand Nubia.  On this day ZTE will show a new smartphone called Nubia Z17 mini.  

Yesterday, the Chinese telecommunications center TENAA certified a ZTE smartphone with the model number NX569J.  This, most likely, is the same Nubia Z17 mini.  Its main feature will be a dual main camera.  It will also receive a 5.2-inch touchscreen display with a resolution of 1920x1080 pixels, a fingerprint scanner, 64 GB of internal memory with the ability to expand with a microSD card and a battery capacity of 2930 mAh.  The core of the smartphone will be the eight-core processor with a clock frequency of 1.8 GHz, supplemented with 4 GB of RAM.  It will be shipped with Andorid 6.0.1 Marshmallow operating system on board.

The TENAA database says that the new ZTE smartphone is housed in a metal case, which will be available in two colors: gold and silver.  Its dimensions are 146?72,14?8,1 mm, weight - 160 g.

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ZTE announces new Android-smartphone Nubia with dual camera April 6

 ZTE announces new Android-smartphone Nubia with dual camera April 6

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ZTE ANNOUNCES NEW ANDROID-SMARTPHONE NUBIA WITH DUAL CAMERA APRIL 6

POSTER: computer news   ||    INTEL INTRODUCED THE FINFET PROCESS TECHNOLOGY WITH THE NORMS OF 10 NM AND 22 NM

DATE:2017-03-29

Intel again confirmed that in the second half of the year it will release the most advanced 10nm solutions in the industry in the face of Cannonlake processors.  The company does not bother at all that TSMC and Samsung have started mass production of 10-nm chips. According to Intel representatives  , none of the competitors is capable of producing such a perfect 10-nm solution as it is.  To prove this, Intel proposed a new technique for calculating transistors on a chip.  The old technique, which relied on measuring the physical distances between closures and metalization contacts, had long since outlived itself.  The shutter step does not correspond to the numbers describing the new process technology for a long time.  For example, for Intel's 10-nm process with FinFET transistors, the gate spacing is 54 nm.

According to Intel, a new technique for determining the process technology for completeness of the picture should be based on the density of placement of transistors on the chip.  So, 10-nm FinFET technical process of the company allows to place 100.8 million transistors on one square millimeter.  For comparison, 10-nm FinFET technology companies Samsung and TSMC on a square millimeter give the opportunity to place a total of 50 million transistors.  

It should be said that the company is not interested in all the transistors on the chip, but only those that are responsible for elementary logic.  So, a simple two-input NAND cell with at least two gates (shutters) and a simple trigger with a minimum of 25 gates should take part in the calculation.  In this case, NAND elements are counted with a weighting factor of 0.6, and triggers with a weighting factor of 0.4.  It will be interesting to hear the comments of TSMC and Samsung.  However, given the proliferation of tools for automatic design,   Intel proposal can make sense for creating a universal methodology.

Also, Intel gave a detailed description of the branded 10-nm process technology being introduced into production and clearly showed its advantage over the 14-nm process technology.  So, the solutions will be produced using a four-step projection with self-aligning templates and promise the following geometry: FinFET edge step is 34 nm, FinFET edge height is 53 nm (rib height was increased by 25% to keep the gate area), metallization step is 36 nm , The gate step is 54 nm, the cell height is 272 nm.  The process technology with 10 nm standards will survive three generations (10, 10+ and 10 ++), as well as the current 14-nm process technology.  By the way, the technological process of 14 ++, with the help of which new desktop processors Intel Coffee Lake will be manufactured at the end of the year, will provide more productive solutions than the first 10-nm process technology.

In addition to the 10 nm process, Intel developed two improvements in the topology of the transistors, which allowed for a 10% increase in density (contact-over-active-gate, COAG) and further single dummy gate.

Interestingly, Intel does not hope for a single reduction in the scale of technological norms.  To compete with the expected 22-nm process technology using the plates from completely depleted silicon (FD-SOI), the company presented a "simplified" 22-nm process with FinFET transistors (22FFL).  Note, the technical process of GlobalFoundries and Samsung for 22nm standards and FD-SOI plates implies the use of planar transistors, so Intel's proposal in the face of 22FFL promises not the worst solution for mass chips.  For example, the 22FFL process technology for energy-efficient solutions, and there will also be a 22FFL process technology for production solutions, promises a 100-fold reduction in leakage currents.

The Intel 22FFL technology promises a 45-nm pitch between the ribs, a 108-nm step between the gates, a 90-nanometer pitch between the metallization (using only one photo mask), 630-nm logic cell height, 18.8 million transistors / mm2 and SRAM cell area 0.88 m2.  For the current 22-nm process FinFET, the gate and metallization step was smaller, 90 and 80 nm, respectively.  The 22FFL process technology will provide a commercially available industry with connectivity to the Internet and the network industry.

Finally, the company gave the characteristics of the technical process with the norms of 14 nm of the latest generation (14 ++).  With its use, the third generation of x86-compatible processors, Altera Stratix 10 matrixes, LTE modems and more will be released.  For these solutions, the edge pitch will be 42 nm, the metallization step is 52 nm, the gate step is 70 nm, the cell height is -399 nm, the number of transistors per mm2 is 37.5 million, the SRAM cell area is 0.05 m2.  The projection uses a spontaneous lithography.

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Intel introduced the FinFET process technology with the norms of 10 nm and 22 nm

 Intel introduced the FinFET process technology with the norms of 10 nm and 22 nm

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INTEL INTRODUCED THE FINFET PROCESS TECHNOLOGY WITH THE NORMS OF 10 NM AND 22 NM

POSTER: computer news   ||    CORE I7-7700K AT 7.1 GHZ WAS ABLE TO RISE TO SECOND PLACE IN SUPERPI 32M

DATE:2017-03-29

Last time the Japanese enthusiast futto-kun stormed the top of the SuperPI 32M with the overclocked up to 7072 MHz dual-core processor Core i7-7700K, but could not rise above the third place with a result of 4 minutes 17,328 seconds.  This week, futto-kun approached the solution of the problem seriously and consistently: the processor frequency was increased to 7099 MHz, and the number of active cores to three.  

The test result in SuperPI 32M naturally improved to 4 minutes 16,234 seconds.  This is the second place in the overall standings.  Like last time, liquid nitrogen was used to cool the processor, and the motherboard  Asus ROG Maximus IX Apex was based on the Intel Z270 chipset .

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Core i7-7700K at 7.1 GHz was able to rise to second place in SuperPI 32M

 Core i7-7700K at 7.1 GHz was able to rise to second place in SuperPI 32M

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CORE I7-7700K AT 7.1 GHZ WAS ABLE TO RISE TO SECOND PLACE IN SUPERPI 32M

POSTER: computer news   ||   HTC U WILL RECEIVE A TOUCH FRAME EDGE SENSE AND SNAPDRAGON 835

DATE:2017-03-29

In January, HTC announced the U Ultra and U Play smartphones.  And soon they will be joined by another smartphone.  It will be called HTC U and will replace the last year's flagship smartphone HTC 10. This is reported today by the portal VentureBeat referring to Evan Blass (Evan Blass).

HTC U is developed under the code name Ocean.  It will be the new flagship of HTC.  The successor HTC 10 will be equipped with a 5.5-inch display with a resolution of 2560x1440 pixels, a top chip Qualcomm Snapdragon 835, and two cameras: a 12-megapixel main with a Sony IMX362 sensor and a 16-megapixel front with a Sony IMX351 sensor.  The amount of internal memory, depending on the version, will be 64 or 128 GB.  

The main feature of HTC U will be a metal frame Edge Sense, which will be able to recognize the touch.  With built-in Edge Sense sensor sensors, users can adjust the volume, brightness of the display, control the camera and perform other actions with gestures.  This function will be customizable.

The official announcement of HTC U will take place in the middle or end of April.  And its sales will start in early May.  The cost of the new flagship HTC is still unknown to us.

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HTC U will receive a touch frame Edge Sense and Snapdragon 835

HTC U will receive a touch frame Edge Sense and Snapdragon 835

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HTC U WILL RECEIVE A TOUCH FRAME EDGE SENSE AND SNAPDRAGON 835

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