The South Korean company Samsung Electronics announced that it has launched the industry's first 64-GB RDIMM-memory DDR4 standard. The module is made up of 36 chips, each of which has a capacity of 4 GB. Today, manufacturers have learned to produce even an 8-Gbit memory chips. According to Samsung, each such 4-Gbit chip assembled in a stack with the latest technology for through-connection of crystals - by TSVs (through silicon via). Such compounds uses the newest and the only industry in the 32-layer memory 3D V-NAND company. Actually, Samsung will start production of new chips as DDR4 technology development and launch of new equipment using TSVs.
4-Gbit chip DDR4 is collected from four 1-Gbit crystals. Subsequently, the number of crystals in the stack is increased. Due to the transition to the through-connection and rejection of wire harnesses crystals managed to reduce by half the consumption of chips and double the speed of access. Unfortunately, the company did not specify the diameter of TSVs, claiming several dozen micrometers, and this is quite an important parameter, since the holes in the amount of several hundred pieces occupy sufficient usable area of the crystals.
Finally it should be clarified that, Micron and SK Hynix in this case is hardly far behind from Samsung. In a similar manner the company Micron memory packs HMC, and SK Hynix - memory HBM. In addition, the previously released Samsung using 40-nm TSVs-chip 8-GB RDIMM (2010) and using the 30-nanometer chips TSVs-32-GB DRAM RDIMM (2011). Related Products :
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