The South Korean company hynix reported about the beginning of series production of integrated microcircuits Flash- memory with 64 Gbit capacity with 20- nm technological process application. The production of memory crystals are achieved at the factory m11 from 300- silicic plates.
According to hynix company , the passage on the new technical process with the topological standards 20 nanometers increases the productivity of line by 60% in comparison with 32- nm technical process. This allow to reduce the prime cost of semiconductor production and to release cheaper microcircuits NAND- memory for smart phone and solid-state disk.
The first series of 20- nm integrated microcircuits Flash- memory hynix must be put on the market nearer to the end of 2010.