Scientists from Georgia Institute of Technology have developed a way to create band gaps in graphene by creating curves on the surface of the substrate. The process begins with etching using electron beams grooves on a silicon wafer. Then the modified surface thus applied the heated carbon, which is hitting the silicon crystallizes in the form of strips of graphene.
The study of the electronic properties of the resulting material has led to an important conclusion: the curved portion has a forbidden band, which has the properties of a semiconductor. Thus, depending on the topography of substrate, a single sheet of graphene may be conductive and semiconductor area.
Scientists have yet to find a full explanation of the processes that cause the graphene to assume the role of semiconductor, however, this does not diminish the significance of the research. Related Products :
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