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Last week there was a conference SPIE Advanced Technology, which focuses on issues of lithographic production.
The conference revealed that Intel, as one of the main initiators of the transition to the silicon substrate size of 450 millimeters, work in this direction has decided to suspend. Apparently, the 450-millimeter wafer will not be used in mass production of semiconductor solutions in this decade - as the new date for their implementation is called 2023.
Also at the conference was affected by a number of questions related to photolithography in the deep ultraviolet (EUV). A huge problem in the development of EUV-lithography is to create a light source of sufficient capacity - technology uses a system of mirrors, passing through which the beam loses energy tangible part. In terms of development ASML, generating corresponding lithographic installation illustrates the huge increase in the power source for the next ten years, but this is still not enough. TSMC, which uses EUV-installation ASML, also notes the unreliability of sources. In general, the bunch of problems EUV technology includes weak and unreliable sources, the creation of which tangible progress is not yet planned, as well as defects of photomasks. But against multiple lithography patterning in combination with other methods observed optimism. Manufacturers believe that these technologies will create a schema with 10 -, 7 - or 5-nm topological norms. Related Products :
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