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Samsung company has announced the beginning of mass production of flash memory chips type TLC (three bits per cell) with a three-dimensional arrangement, which are intended for use in solid-state drives and other storage devices. The first generation of V-NAND (Vertical NAND) - as Samsung calls this kind of memory - was presented in August 2013, now we are talking about is already the second generation technology.
The new generation of V-NAND number of layers in the chip has increased from 24 to 32 pieces. Samsung noted that the three-dimensional arrangement enables to more than double the memory efficiency as compared with planar chips TLC NAND 10-nm class.
Incidentally, the new memory should find application in solid-state drives Samsung Series 850 EVO. Presumably, the official announcement last held in the next couple of months.
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