TDK showed a prototype of a non-volatile memory such as STT-MRAM

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POSTER: computer news   ||   TDK SHOWED A PROTOTYPE OF A NON-VOLATILE MEMORY SUCH AS STT-MRAM	DATE:2014-10-09
On the passing CEATEC exhibition in Japan TDK company demonstrated a prototype chip magnetoresistive random access memory with spin transfer - STT-MRAM.  According to the level of performance comparable to this memory SRAM and DRAM, but the STT-MRAM differs non-volatility and can store the recorded data for long periods. Various embodiments of the magnetoresistive memory are developed for a long time.  TDK focuses on technology spin transfer - when data is written under the influence of an electric current of spin-polarized, there is a change in the orientation of the magnetic field.  The exhibition displays 200-mm plates with crystals STT-MRAM, the density of which is 8 Mbps, as well as of packaged chip. Unfortunately, TDK will not soon begin mass production of STT-MRAM memory  - according to various estimates, the maturation of the technology will go from five to ten years. Incidentally, TDK is not the only company that develops technology STT-MRAM.  Its main competitor in this area is Everspin Technologies, which already leads the supply of relevant chips in limited quantities.  Everspin memory is used, in particular, as a cache SSDs Buffalo Memory. Related Products :

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