A week ago we talked about the preparation of Intel's first SSD-drive server memory 3D XPoint - this 375-GB model in the series Optane P4800X. Yesterday at Intel's site was no official mention of this model and there was confirmation that the memory of the first wave 3D XPoint manufactured using 20-nm technology standards. Unfortunately, the document on the Intel website is only available to authorized users.
In general, while the model Optane P4800X capacity of 375 GB is really one in the line. Interestingly another - production of chips 3D XPoint with the norms of 20 nm. Memory 3D XPoint - is a cell-based substance changes phase. It can be considered a type of ReRAM memory because the information read by measuring the current passing through the cell. If the substance in the cell is in an amorphous state, no current flows through it, and if a crystalline (low resistance) - currents flow. On the other hand, MRAM memory is called ReRAM, although it also depends on the still flowing through the tunnel junction current.
In the best case we are talking about 40-nm process technology. Even the memory of 3D NAND performed on the process 45-35 nm. This suggests that Intel and Micron have created a good foundation for the transition towards a new type of non-volatile memory. Another thing is that they are unlikely to take the risk to invest in this area has so much to begin to reshape the market.