Intel and Numonyx new memory on base of phase transitions

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POSTER: computer news   ||   INTEL AND NUMONYX NEW MEMORY ON BASE OF PHASE TRANSITIONS	DATE:2009-10-29
The memory, which uses the effect of phase transitions, according to scientist forecasts, is one of the few real alternatives to present HDD and data storage devices on base of NAND- memory. Intel company  , which with the assistance of its daughterly enterprise numonyx develops the sphere of memory creation with the phase transition from first half of the present decade, yesterday Intel stated about the breakthrough in this sphere. To Intel companies  at the given moment belong up to 45,1% of numonyx actions  , remaining are divided between  STMicroelectronics and investment trust For francisco partners. Within the research joint Intel and Numonyx company could develop the formation method of multilayer memory on base of phase transitions, after obtaining the possibility to produce the vertically integrated cells PCM (S). Each includes two elements, that are located in parallel layers: PCM and switching module Ovonic threshold switch (OTS). In the totality PCM (S) is formed main array. The possibility to superimpose layers PCM (S) - cells on each other allow to increase the density of storage information, preserving the characteristics of single-layer phase memory. The  memory cells phase is created by connecting the storage data component  and switching element. To use of PCM as the storage data component  had been already attempted, but immediately several types of switching elements were used , which led to the limitations of the array according to the size and effectiveness.  Intel and Numonyx Engineers could use thin-film two-terminal OTS as the switching element. It corresponds to physical and electrical properties PCM, offering the possibility of scaling. Because of this innovation, the creation of multilayer memory became possible. Researchers created the model of 64-mb cell PCM (S) - memory with the multilayer array on one crystal. Intel and Numonyx connect storage cells with the CMOS- structures, which ensure logical functions and transformation of signals. Developers demonstrated, that the discharge of  information,  in cells, is made on 9 ns, and the memory itself does not lose properties even after 1 ml Cycles of recording. New technology will allow to create the high-speed systems memory  data storage and  with the random access, which will possess the higher data storage density , the smaller energy consumption and small sizes. Since the technology does not provide for special limitations in a quantity of  PCM (S) slots, placed on one crystal, this memory type  is characterized by a good potential of an increase in the information  storage density  . Related Products :

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