According to the estimations of experts, in some stage the possibilities of solid-state memory NAND in the writing density will be exhausted; therefore scientists and engineers actively search for alternative technologies . HP Company counts on elements, capable of changing their resistance. The theory of memresistor was described in 1971, but the first real model of this element was obtained in HP laboratories in 2008.
As reports associate, HP company does not intend to be occupied personally by the production of memresistor and memory on their base, but therefore it began collaboration in this sphere with the Korean company hynix, which can release products with the use of reRAM to the end of 2013. The writing density for this memory type will be two times higher than in the existing solid-state devices. The advantages of reRAM memory are the ability to not lose charge in the course of time, stability to radiation action and the possibility of using the multilayer layout. Furthermore, memresistor can take the functions of transistor, performing certain logical operations. Calculations will be made not only with specialized processors, but also by the memory .
Memresistor can be used for creating solid-state disk and memory.