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The producers of solid-state memory actively search for ways of its further improvement, which allow to reduce prime cost, and to also raise density and recording speed . The companies elpida and Spansion last week declared about the creation of first models of storage cells SLC with four gigabits density, that use technology of catching charge. It was proposed by samsung company in 2003, but up to 2006 did not find practical realization. In comparison with the current memory with the floating lock, the memory with trap charge reduce the quantity of technical process production steps and noticeably increase writing density .
Elpida is assembled to begin the deliveries of models with the corresponding memory microcircuits in the fourth quarter in this year. Besides 4- Gbit microcircuits, are developed microcircuits with 1 and 2 gigabits density. Elpida will combine solid-state memory microcircuits with storage for mobile devices so the producers of the latter could obtain these two component from one supplier on the more advantageous conditions. Related Products :
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