Last week at ISSCC 2012 Samsung and Hynix showed engineering samples of DDR4 memory. Large-scale introduction of a new memory standard is not expected until 2014, but the mass production of DDR4 chips will begin this year, the companies seek to master the 20 nm process technology.
Engineering model of memory module based on Samsung chips, designed on 30 nm technology, operates at an effective frequency of 2133 MHz at a default voltage of 1.2 volts. Hynix chips are made on 38 nm technology, but offers an effective memory frequency of 2400 MHz, operating at a voltage of 1.2 volts.
According to JEDEC plans , the DDR4 memory modules in the form of 32 GB with ECC support will be initially implemented in the server segment, the maximum frequency will be 2400 MHz. For desktop systems, the frequency range will vary from 2133 to 3200 MHz.