Experts from the Federal Polytechnic School of Lausanne (EPFL) have developed a new type of non-volatile memory. As base of memory, as well as the material for the electrodes used multiple layers of graphene, and to switch the cells, scientists applied a layer of molybdenite. As shown by the study, such a layer has a nearly perfect pitch for the band gap, which will toggle the state of the zeros in the unit as quickly as possible and with minimal energy consumption.
According to the design author's , both materials in its electrical properties superior to silicon, and when combined their advantages are summarized. Note that molybdenite as graphene - the materials are inexpensive, and can be used in the hyperfine structure - it will contribute to the dissemination and application versatility of a new memory type , including flexible and transparent devices. Related Products :
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