A year ago, Everspin company began shipping magnetoresistive memory type ST-MRAM , which provides high performance above the traditional DRAM and consumes less power. Mass production of the respective chips at 64 megabits started only this year.
Buffalo has been the first manufacturer dared to use the ST-MRAM chips in their SSDs series SS6 as a buffer. In contrast to the version with the traditional type of DRAM memory , this solution does not require a backup power source in the form of a capacitor - the memory type ST-MRAM does not lose data when power is removed. Moreover, it consumes less power during operation and provides a low latency.
As explained by the manufacturer, at the interface ST-MRAM meets JEDEC standard for memory such as DRAM, so the adaptation of magnetoresistive memory buffer is not the most challenging. Buffalo will be showcasing a series of drives at the event SS6 Embedded Technology 2013, which will be held from 20 to 22 November in Japan.