Samsung company issued a press release in which it announced the commissioning of the world's most advanced factory for production of flash memory NAND-type. The company built in the Chinese city of Xian (Xi'an), Shaanxi Province. The honor to open the plant was provided to vice chairman of Samsung Electronics, and local party bosses. Construction and placement of equipment was completed in record time - just 20 months. However, before the end of the year yet to finish a series of final work.
Total production area of 230,000 square meters. The whole area of the factory - is 1.14 million square meters of land. All this stuff will make a significant contribution to the flow of flash chips with the label Made in China. Assembly and test lines will be completed just before the end of this year. At the moment, analysts say, China produces about half of the total output in the world of flash products.
As for the production plant in Xi'an, this so-called V-3D NAND . This is the memory with high density 3D-layout layers and TSVs-vertical connections. Besides Samsung's similar structures nobody in the world produces an industrial scale. The transition to a vertical layout of flash memory chips due to the fact that reduction of the scale of production of flash memory barrier below 15 nm is uneconomical. Proved effective use 40-30 nm process and multilayer 3D-structure.