SSD-drives Samsung 840 EVO catastrophic performance degradation

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POSTER: computer news   ||   SSD-DRIVES SAMSUNG 840 EVO CATASTROPHIC PERFORMANCE DEGRADATION	DATE:2014-09-22
Bad news for users that purchased SSDs Samsung series 840 EVO: these devices lose speed performance on read operations when accessing the data recorded a few months ago. In mid-August at the forum site www.overclock.net began to form a theme dedicated to the unusual behavior of the drives in this series: unpleasantly surprised users showed a speed of about 40-50 MB / s read even large files, where the operations are linear and the rate should be much higher.  Running test applications like HD Tune and AIDA64 also showed unusually low for modern SSD performance. And this is a screenshot, courtesy of one of the participants of this Conference: The problem there is with reference to the data that have been stored for several months ago and since then did not undergo any major changes, for example, files of any game or large applications.  Same appeal to the newly burned all data is at full speed, so running traditional tests for their work creating their own files (such as, for example, Crystal Disk Mark), will not allow to detect the problem.  Similarly, the problem and corrected: it is necessary to overwrite the data again.  For example, run the built-in Windows defragmenter staff (although users of Windows 8 and 8.1 have to find workarounds - in this, optimized for solid state drives, the system defragmenter by default with a TRIM command to fly free data volume). And, apparently, this unpleasant situation is inherent in Samsung 840 EVO, and the older Samsung 840, which also rely on memory TLC NAND, is not affected by this problem.  At least to me, on my Samsung PM841, which is the OEM-version of the Samsung 840, a similar situation were unable to reproduce.   However, the most likely reason is the architecture of modern memory devices.  Suffice it to recall the phenomenon of charge leakage from the cell: over time, the charge in the cell becomes weaker and read it is becoming increasingly difficult, and at some point it becomes even impossible.  Moreover, the period for which there is a complete loss of the charge and the data becomes unreadable, depends on process used for the cell is made.  For example, for a modern 19-nm MLC NAND by some observers in the global network informally specify the period of a few months. That is why in the firmware of modern NAND-memory controller was originally incorporated algorithms that monitor the charge level of the cell as soon as it falls below a certain level, is read and the subsequent data is overwritten again.  Apparently, this is the algorithm for some reason in the firmware Samsung drives 840 EVO was ineffective, or just disconnected, and at some point the charge level in the cells is weakened so that the controller is forced to repeatedly refer to the problematic cells, simultaneously engaged in more and error correction, which in total leads to such a large performance drops. Despite the lack of comments on the causes, Samsung representatives explained that about the problem they already know and now is looking for ways to eliminate it.  Expect to release an updated version of firmware for Samsung 840 Series drives EVO. The problem of leakage of the charge is not unique to TLC NAND, from it are also suffering  MLC, and SLC NAND.  And the main factor affecting the leakage rate is the technical process of manufacturing the memory - the thinner, the faster the degradation. Related Products :

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