Sony and Micron showed a working sample of 16-Gbit RRAM

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POSTER: computer news   ||   SONY AND MICRON SHOWED A WORKING SAMPLE OF 16-GBIT RRAM	DATE:2014-12-24
Yesterday, on 2014 IEDM conference we spoke about the option of a multi-layer (3D) memory type RRAM (ReRAM) from young company Crossbar.  The company has a working prototype of a 4-Mbit chip resistive memory.  Sony and Micron presented at IEDM 2014 prototype 16-Gbit chips RRAM.  This is as much as 2 GB on a single chip!   Micron company selected partner only for the reason that Sony has no manufacturing capacities for RRAM. Micron company  at one time by cycle acquisitions acquired technology for the production of non-volatile memory with the phase states of matter - PRAM or PCM (phase-change memory).   Real Sample RRAM memory capacity of 4 Mbps, Sony showed in 2011.  In February 2014 ISSCC conference in 2014 the company announced the preparation of 16-Gbit sample.  It is embodied in silicon solution has been demonstrated partners last week at IEDM 2014. Released chip  Micron company Process technology - 27 nm.  RRAM memory cell has a relative sizes 6F.  This is a fairly large area.  For comparison, the area of modern DRAM memory cells with reduced size relative to 6F 4F. As shown by the test pilot module RRAM, developers almost repeated the theoretical calculations.  In the table above you can see a comparison of the theory with practice.  Well-established reading speed was slightly lower than 900 MB / s.  Recording speed was also below the theoretical: instead of 200 MB / s - 180 MB / s.   As material for the layer saturation Sony uses copper.  Conductive filaments in the layer formed due to the saturation of copper ions (Crossbar company uses silver, which complicates the manufacturing process.  Interface RRAM taken from memory DDR DRAM, which will without any special problems immediately begin to install the resistive memory anywhere .   Related Products :

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