According to the organization International Technology Roadmap for Semiconductors (ITRS), may be a promising semiconductor manufacturing using germanium (Ge) or gallium arsenide (GaAs). Transistor feeds of these materials can be combined with the conventional processing cycle, silicon substrates. Simply put, the only change materials, and not the entire manufacturing process as a whole. The plans ITRS means that semiconductors based on germanium or gallium arsenide appear until 2028.
As an option a group of American universities developed the transistor channel based on ferroelectrics. In particular, over FeFET transistor (ferroelectric field-effect transistor) staff member of the University of Texas Alexander demos. Work are more theoretical in nature. Developers are beginning to experiment with a material such as barium titanate (BaTiO3). For everyday products, this material is not suitable, as for the manifestation of the desired effect requires a temperature
of about 120 degrees Celsius.
An important feature of the transistors gates with ferroelectric promises to be not only an opportunity to reduce the production rate , but also the memory effect inherent in such materials. This is an opportunity not only to extend the validity of Moore's Law, but also a chance to create a universal non-volatile memory.
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