Toshiba and SanDisk introduced a 48-layered 256-Gbit TLC 3D NAND-flash

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POSTER: computer news   ||   TOSHIBA AND SANDISK INTRODUCED A 48-LAYERED 256-GBIT TLC 3D NAND-FLASH	DATE:2015-08-05
Yesterday separate press releases from Toshiba and SanDisk reported on preparations for the manufacture of the industry's first 48-layer flash memory NAND-type capacity of 256 Gbps and using TLC-cell.  Thus,  Samsung, Intel and Micron company exploit 32-layer structure of 3D NAND, SK Hynix company  - 36-layer, and Toshiba and SanDisk - 48-layer.  Also, each of the manufacturers have their own names 3D NAND-flash.  The company Samsung -  3D V-NAND, and Toshiba and SanDisk -  BiCS (Bit Cost Scalable, affordable, and scalable memory). In March, Toshiba and SanDisk introduced a 48-ply 128-Gbit memory chips BiCS.  Fresh announcement tells us that the partners have completed the 48-layer 256-Gbit memory chips BiCS using 3 bit TLC-cell.  In any case, it is reported that in September this year SanDisk is ready to send samples to customers ( 256-Gbit chips ).  These devices are suitable for the full range of application NAND-flash: for non-volatile memory devices, and for the release of solid-state disk. Mass production of memory BiCS begin in the first half of next year.  For the production of 3D NAND, Toshiba hastily rebuilds one of their old factory - Fab2 in Iokkaichi.  Entering this enterprise into operation is scheduled for the first half of 2016.  Note Toshiba is lagging in the wake of the transition to production of 3D NAND.  The first two years to release 3D NAND launched by Samsung and has already released the second generation of three-dimensional memory: 128-Gbit MLC chip types and TLC.  The company SK Hynix to the production of 128-Gbit MLC 3D NAND launched in the current quarter, and Intel and Micron release 256-Gbit MLC and 384-Gbit TLC 3D NAND will begin in the fourth quarter this year. Related Products :

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Xtreview Support N-Post:xxxx Xtreview Support	TOSHIBA AND SANDISK INTRODUCED A 48-LAYERED 256-GBIT TLC 3D NAND-FLASH
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