GlobalFoundries note plate FDSOI can use silicon busy

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POSTER: computer news   ||   GLOBALFOUNDRIES NOTE PLATE FDSOI CAN USE SILICON BUSY	DATE:2015-12-20
Ten years ago in the news about AMD processors often flashed mention of tense or strained silicon.  Creating zones of stress in the crystal lattice improves mobility of the electrons, leading to the possibility of increasing current through the transistor, and opened the way to increase performance or reduce consumption.  Such technology was originally developed by IBM and its alliance members club.   In today's busy silicon semiconductor manufacturing is still in use.  This technology can also be used in the case of manufacture of chips on substrates of fully depleted silicon-type FDSOI.  Using FDSOI promises to be a reasonable alternative for the price 16/14-nm process technology with FinFET transistors.  FDSOI chips on wafers using the same standards of technical process will be a little bit faster and more energy efficient in comparison with conventional silicon chip on the monolithic plates and somehow come close to the parameters of the chips with smaller process technologies.  .  It is likely that both manufacturers will be able to take advantage of the latest technology to create areas of tension in the layer FDSOI. Technology of creation of  tension zones in FDSOI invited the French organization Leti. To create a transition p-type compression zone is created, which uses a germanium-silicon channel, and to create n-channel is created by the tension zone of the crystal lattice. The strength of the compression in the channel, as defined in the course of experiments, reaches 1.6 GPa (GPa). The n-channel are reportedly easier to do, which is enough to set the firing modes. Theoretically  calcination can  be also made by a p-channel type, but they are not as effective. As for efficiency, the SiGe-channel compression promises to increase the electron mobility more than 20%. This is an excellent indicator of who will have to pay a change of scale process technology. However, for the 28-nm FDSOI these technologies are not justified. According to the developers, the zone of tension makes sense to enter the 20/22 nm process technology.   Related Products :

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