Tsinghua Unigroup building in China is another plant for the production of DRAM and 3D NAND

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POSTER: computer news   ||    TSINGHUA UNIGROUP BUILDING IN CHINA IS ANOTHER PLANT FOR THE PRODUCTION OF DRAM AND 3D NAND	DATE:2017-01-22
At the end of last week a major Chinese investment holding company - the company Tsinghua Unigroup - announced plans to build another semiconductor plant in China.  Chinese companies need more and more chips, and in particular, how the DRAM memory chips, and NAND-flash.  Earlier Tsinghua Unigroup company tried to find partners to gain access to memory or to patents for the production of memory among foreign manufacturers.  So, it applied to the company SK Hynix, and even made an attempt to buy shares of the company Micron.  In all cases, the Chinese have been denied .  Then Tsinghua started construction of plants for the memory issue in China. Last year, Tsinghua Unigroup and by Wuhan Xinxin Semiconductor Manufacturing (XMC) created a joint venture for the production of NAND memory for 3D Spansion Company license (formerly a joint venture of AMD and Fujitsu companies).  JV Yangtze River Storage Technology (YRST) has already started construction of a 3D NAND production of plant for 300-mm wafers.  First of all the lines will start operating in 2018.  Completion is expected in 2020 with access to power 300 thousand Wafers per month.  The volume of investments - $ 24 billion (for Micron offered $ 23 billion). The second plant for the production of memory, as it became officially known a few days ago, will be built in Nanjing.  The first phase of production will require $ 10 billion investment and will provide a monthly treatment of 100 thousand. Plates.  Time of putting into operation the first stage of production is not specified.  The main problem for the Chinese - is to obtain licenses and technologies needed for the production of advanced memory types.   Related Products :

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