New intel Dram

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POSTER: computer news   ||   NEW INTEL DRAM	DATE:2008-06-21
Intel spoke about a new technology, which will allow essentially to increase the productivity of future generations processors. As is known, the processor performance is defined by many factors : pipeline length , the number of core, their frequency and the cache volume . Moreover we will not forget about the data exchange between the processor cores. Thus, for instance, the 65- nm kentsfield bandwidh was only 8-9 GB/s, the 45- nm chips harpertown reach already 18-20 GB/s. Intel company recently developed the technology, which allow due to the DRAM- memory to accelerate the data exchange inside the processor with several cores. They succeeded in reducing the size of DRAM cells to entire a pair of transistors and completely get rid from capacities. These two steps must become the basic part in the new technology. In contrast to new DRAM, which requires 2 transistors for storing 1bit data, SRAM require a little more than 6 transistors. But here the energy consumption of SRam memory was lower than in DRAM. According to Intel company,  engineers was able to obtain the working models 2T-DRAM- Memory, produced according to 65nm standards and working at 2 GHz frequency . Bandwidth was impressive 128 GB/s. respectively, if we find the method to raise frequency to the level of the high end processors (QX9770/9775), then this value would increase to 204,8 GB/s. this approximately 10 more effective solution, than the use of L2 cache today. Furthermore, this approach could completely change programming under these processors. It is expected that with the 45- nm technology and  High- k , intel can increase the frequency of processors and the following logical step can become the integration of DRAM cells in the processors intel terascale, which will use many X86- Cores. Related Products :	NEW INTEL DRAM

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