The future of Semiconductors

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POSTER: computer news   ||   THE FUTURE OF SEMICONDUCTORS	DATE:2008-11-23
According to scientists estimation, in the near future silicon can be replaced by Grafe  . Grafe is a carbon layer with one atom thickness. If silicic transistors lose stability with the sizes of less than 10 nm, then Grafe transistors possess a splendid stability with sizes less than 1 nm. Scientists from the American university Rice (Houston, Texas state) assert that the Grafe with 10 atoms thickness can serve as unit cell for the new type of solid-state memory, which in the course of time will extrude the existing memory on base of silicic elements. The dimensions of Grafe cell memory can not exceed 10 nm, whereas contemporary storage cells use 45 nm technology. With the use of two-dimensional arrays this allow to increase the writing speed by five times. The low energy consumption level, necessary for storing information, is a important merit of the new memory type - 100 000 times less than in present solid-state memory. This will allow to considerably increase the storage devices capacity . Memory based on Grafe is capable to work in the temperatures range from minus 75 to plus 200 degree Celsiuss. Finally, Grafe memory has a high operation speed and longevity. Under laboratory conditions 20 000 write cycles did not lead to any properties degradation . Scientists now work at the acceptable technology for the industrial production of Grafe devices. Related Products :

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