New Static random access memory
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POSTER: computer news || NEW STATIC RANDOM ACCESS MEMORY |
DATE:2008-12-17 |
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The corporations Toshiba, IBM and AMD declared about the development of cell static storage with arbitrary access (Static random access memory, SRAM), whose area was equal to 0,128 sq. m. This is the smallest in the world functioning cell SRAM. According to the size it up to 50% less than similar cell.  In the development of this SRAM are used finFET transistors , prepared with the application of HKMG technology (high- k/metal gate : materials with high constant dielectric and metallic locks). Cells SRAM are the key components of the majority of large-scale integrated circuits, for example, microprocessors. The decrease of SRAM cells sizes will help to decrease the sizes and the energy consumption of processors, having simultaneously increased their speed. The simulation of cell with 0,063 sq. m area, corresponds to the application of standards less than 22 NM. Related Products : | ||
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NEW STATIC RANDOM ACCESS MEMORY |
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Enermax introduced DFPressure 120mm fan with high static pressure (2016-05-18)
New Static random access memory (2008-12-17)
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