Toshiba FeRAM memory

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POSTER: computer news   ||   TOSHIBA FERAM MEMORY	DATE:2009-02-09
Toshiba company reported about the development of FeRAM memory prototype  (Ferroelectric random access memory - ferroelectric energy-independent memory with arbitrary access to cells). It is declared, that the prototype is the fastest and largest energy-independent memory in the world. The microcircuit volume is only 128 megabit (16 megas-byte), but it possesses an imposing performance - the read/write rate composes 1.6GB/s. Currently, FeRAM- memory production is found on the earliest development stage and this prototype was created on 130nm technical process, which is not unconditionally the peak of progress, even when the discussion deals with memory microcircuits production  . However, this situation will change undoubtedly, since Toshiba will continue the development process of FeRAM- memory production. The new feRAM prototype uses a DDR2 memory interface , which must facilitate its integration with the already existing computer technologies. FeRAM appears to be much more effective, than contemporary DRAM- memory . Related Products :

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