Samsung PRAM
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POSTER: computer news || SAMSUNG PRAM |
DATE:2009-09-23 |
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Samsung electronics company declared about PRAM memory chips with the density of 512 Mbit. The energy-independent memory new generation is characterized by high operation speed and small energy consumption. PRAM is deciphered as phase of random memory access change : memory with arbitrary access, in which is used the effect of phase transition. The high storage density , large speed and small energy consumption open a new memory road for smart phone, where this combination of properties is very claimed. According to the estimation Of Samsung, the application of PRAM will allow to increase the operating time from the battery more than 20%. The first samsung products PRAM is made on 60- nm technology, the same is adapted for the release of flash- memory NOR type. | ||
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