New technological solutions are constantly developed for different product groups . Samsung company demonstrated a new development - PRAM memory . This is the energy-independent memory with arbitrary access, in which is used the principle of phase transition.
As report our associates, chip with 512 Mbit density will be capable to erase block of 64 thousand words in 80 ms, which is more than 10 times faster than flash- memory NOR type . But if we work with information blocks with 5 mb volume , then PRAM is capable of erasing of rerecording 7 times faster than standard NOR flash memory.
PRAM has not only the high operation speed , but also high indices of energy-effectiveness. Samsung considers that the new memory will be claimed in the ultra-mobile segment, where with the use of PRAM it is possible to increase the operating time by 20%. Thus, information can be stored up to 300 years at the temperature of 85 degrees Celsius.