Intel IDF 2009 22 nm

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POSTER: computer news   ||   INTEL IDF 2009 22 NM	DATE:2009-09-23
The Director-General and Intel corporation President (Paul otellini) demonstrated the first microcircuits models , prepared according to 22- nm  technological process standards. Mastering ever thinner technological standards, Intel continues to prove the validity of Moore's law. In the chips, announced two years after the mastery of 32- nm  technological process, the third generation of  Hi- K technology with the metallic lock is realized. New development sequential time confirmed that Moore's law satisfactorily stepped over the conditional boundary, beyond which, in the opinion experts, the semiconductor industry must encounter insoluble problems. Only after the achievement of success with these products on the new technology , Intel will switch over the release of new generation processors  . Now Intel works at the adoption of  22 nm standards in the mass production of microcircuits . The test microcircuits, released with  22 nm standards are SRAM memory and logical modules.  SRAM- cells with size of 0,108 and 0,092 sq. m function in the composition of array on 364 ml bits. Cell sq. m am optimized by the area of 0,108 for work in the low-voltage region, while cell with the area  0,092 sq. m is the smallest known today cells SRAM. For the achievement of this result Intel uses lithograph with wavelength 193 nm. Related Products :

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