The most important Japanese supplier of dynamic memory with random access declared about the development of high-speed memory chips DDR3 SDRAM with density of 2 Gbit with the lowered energy consumption. They are designed for production according to the 40 nm standards.
According to Elpida memory company, the decrease of crystal size allows to by 44% increase output from one plate in comparison with the production in 50 nm standards. In comparison with 50- nm memory is approximately up to two thirds reduced . Furthermore, new memory can work with the supply voltage 1,2 and 1,35 v, and also with standard for DDR3 SDRAM 1,5 v. This allows to decrease energy consumption by 45%.
According to the estimation of the company, the investments, necessary to the passage from the 50 nm standards to 40 nm standards are equal to zero moreover, passage from the 65 nm standards to the 40 nm standards requires less expenditures than passage from the 65 nm standards to the 50 nm standards.
In order to reduce the prime production cost , the company plan to enlarge the application of 40- nm technology and to bring it to 50% of the total production volume .
The appearance of microcircuits models 40- nm memory elpida DDR3 SDRAM with 2 Gbit density is expected during November.