40 nm DDR3 memory 4 Gbit

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POSTER: computer news   ||   40 NM DDR3 MEMORY 4 GBIT	DATE:2010-02-24
South Korean semiconductor giant declared about the  release of  40 nm DDR3 memory microcircuits  with 4 Gbit density with the lowered energy consumption. According to Samsung electronics, this memory will ensure the essential electric power savings to computer centers, to servers and to highly productive notebooks. Today servers are usually provided with six slots for RDIMM modules,  that corresponds to maximum volume 96 GB. Module with  DDR2 components with the density 1 Gbit, prepared according to 60 nm standards, consumes 210 W. Module with DDR3 components with 2 Gbit density,   prepared according to 40 nm standards, consumes 55 W, which corresponds to savings of approximately 75%. In the case of applying the new microcircuits with 4 Gbit density,   the required power decreases to 36 W, which to 83% is less than the index of the module on DDR2 components with 1 Gbit density,   prepared according to 60 nm standards. Using DDR3 microcircuits with 4 Gbit density,   it is possible to make server memory modules with 32 GB  volume,  which is twice greater than the volume of modules, made with the application of components with 2 Gbit density. This concern memory modules  for notebook. After the release of  DDR3 components with 4 Gbit density,   Samsung plan to transfer to 40- nm technology more than 90% of DDR DRAM. New memory is designed for the supply voltages  1,5 and 1,35 v. it has already been used for the release of  RDIMM modules with volume 16 and 32 GB, and SO-DIMM modules with 8 GB volume. Related Products :

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