40 nm 4Gbit Samsung memory

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POSTER: computer news   ||   40 NM 4GBIT SAMSUNG MEMORY	DATE:2010-02-25
Transferring memory to the more contemporary 40 nm technical processes, producer reduces the energy consumption level, increases the information writing density,   economizes on production costs. Buyer obtains the more capacious modules,  which consume less electric power. Samsung company yesterday declared about the mass production of four memory microcircuits DDR 3-1600, produced on 40 nm technology. Having for the first time presented 40 nm DDR- 3 microcircuits during July last year, samsung company in seven months could increase the writing density to 4 Gbit. The new memory generation has default voltage 1.35 v or 1.5 v, the volume of one memory can reach 16 or 32 Gb in case of using the register organization, and 8 Gb in the case of using soDIMM modules for notebooks. Soon Samsung plan to transfer more than 90% of its memory DRAM on 40 nm production technology.   The application of new generation memory modules in server systems allows to reduce the overall energy consumption level to the value up to 10%. Related Products :

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