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Samsung company today reported abou the registered memory module DDR 3-1066 models with 32 Gb volume, using 40 nm memory. Each module consists of 36 two-chip microcircuits with the density of 4 gigabits. The new memory modules increase the working volume from 192 to 384 Gb, ensuring an increase in the energy consumption only 5% in comparison with a system, characterized by 16 Gb modules.
The memory modules DDR 3-1066 work with the default voltage 1.35 v , Four processor systems can reach the capacity up to 2 teras-byte. Mass production of the corresponding memory modules will start during April this year. Related Products :
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