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Literally 10 months ago samsung company declared about the release of new NAND microcircuits flash- memory, which was characterized by the increased speed and writing density , with the retention of energy consumption level.
Samsung is assembled to further transfer flash- memory to the thinner 20 nm technical process. The microcircuits, made by this company on MLC technology, are sufficiently rapid, and also have a good density indices and energy consumption. however, not sufficiently good for their use in solid-state disk. 3 bit chips will be used in flash- memory secure digital and USB flash disk.
On the assertions of company, the new chip made on 20 nm standards, with the doubly larger volume will obtain up to 60% of superiority in the operating speed. Originally Samsung plans to begin from simpler solutions 32 Gb memory and then enlarge production to 64 Gb devices, made on the same technology within the 20 nm technical process. Related Products :
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