Transferring the production of memory microcircuits to the more advanced technological standards, producers attain not only reduction in the energy consumption and prime cost, but also increase in the capacitance of one memory module. elpida company yesterday reported about the deliveries of memory modules models DDR 3-1866 with 4 Gb volume SO-DIMM, made on 30 nm technology microcircuits.
In comparison with 40 nm microcircuits it was possible to reduce the energy consumption level under load by 20%, and the energy consumption level in the standby mode by 30%. The default voltage for the memory modules is equal to 1.5 v. the passage on 30 nm technical process according to elpida representatives will reduce expenditures for memory production. Mass production of memory modules SO-DIMM with 4 Gb volume, equipped with 30 nm microcircuits, will start in the first quarter 2011. Related Products :
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