Toshiba 19 nm MLC

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POSTER: computer news   ||   TOSHIBA 19 NM MLC	DATE:2011-04-21
Last week the joint enterprise intel and Micron pretended to the technological leadership in the sphere of solid-state memory production type NAND. It communicated that the enterprises IMFT began the release of 20 nm memory microcircuits with 8 Gb volume, in series production they will appear only in the second half-year. Today Toshiba company reported obtaining the first memory microcircuits models MLC with  8 Gb volume, released on 19 nm technology. In one packing can be united 16 such crystals, which allow to create compact microcircuits with 128 Gb volume, which will find use in smart phone and tablets. Those obtained by toshiba microcircuit use two-bit organization, but microcircuits with the 3 bit organization will be also released on 19 nm technology. The 19 nm models of Toshiba memory microcircuits will be obtained to the end of this month, mass production will be fixed in the period from July through September this year. These microcircuits use technology DDR 2.0, which ensures a increase in the transmission speed. In the production of memory microcircuits together with Toshiba participates sanDisk company  , which plans to use 19 nm in its SSD. The data storage devices on base of 19 nm memory MLC will use special architecture and algorithms , which prevent reduction in the longevity and efficiency loss. Similar deficiencies were observed after transfer from 34 nm to 25 nm memory. Related Products :

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