GlobalFoundries will overtake Intel

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POSTER: computer news   ||   GLOBALFOUNDRIES WILL OVERTAKE INTEL	DATE:2012-09-21
The technology of three-dimensional transistors Intel Tri-Gate (FinFET) in the first generation proved not as effective as might be desired for developers.  Turning the channel of transistor in the comb, and surrounding it with three sides of gate, was able to significantly reduce the drive voltage to reduce  current leakage and increase operating currents.  The advantages of this approach is understood by all manufacturers of semiconductors. First after Intel rushed TSMC company.  Adapting the ARM architecture to its process technology, the world's largest contract manufacturer of semiconductors has promised to start producing solutions using three-dimensional transistors in the 16-nm process technology in the second half of 2015 .  UMC - number two (most likely, number three) in the market of contract manufacturing of chips also will follow.  With the development of IBM company UMC is going to start production of FinFET in the second half of 2014 based on 20-nm process technology.  Finally, yesterday, out of GlobalFoundries company reported about similar plan.  According to an official press release, the production of three-dimensional transistors  will start in 2014 in 14-nm process technology. This year, GlobalFoundries has released a lot of 28-nm-making, but it is, in general, such products on ARM architecture,  cellular modem or controller.  Speaking of SoC (not even on computer architectures), in 2011 they were only prototypes.  In fact, even now, in our view, it would be premature to talk about the mass production of 28-nm by GlobalFoundries,  not  based on LP-production, but on HKMG-process (with metal closures).   If everything goes like clockwork, in 2014, GlobalFoundries company will offer ARM developers SoC process technology with 14nm-XM, where XM stands for extremely mobile.  It is expected that, in comparison with  20-nm process technology manufacturing process on 14nm-XM improve indicators such as the duration of battery life by 40-60%.  It is interesting to note that the technology 14nm-XM will combine 14-nm FinFET-transistors with 20-nm elements.  The developers call it modular structure.  It is assumed that this approach will most quickly adapt development tools 20-nm semiconductor to the 14-nm FinFET-process technology. Related Products :

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