On Thursday, Samsung has reported on progress in the development of 45-nm process eFlash (Embedded Flash). According to the official press release, the technology has been successfully used to create an integrated circuit designed for use in smart cards, suggesting the possibility of the development of production on an industrial scale.
Cell flash memory stand up to one million write cycles, while competitors offer only half as much resource. In addition, by improving the structure of the cells Samsung has a 50% reduction in the random access time when reading from memory, and a 25% increase in energy efficiency of the chip.
Mass distribution of products, built in accordance with the 45-nm process eFlash, developed by Samsung, will start in the second half of 2014.