Intel company released EDRAM chip from an array of FinFET transistors

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POSTER: computer news   ||   INTEL COMPANY RELEASED EDRAM CHIP FROM AN ARRAY OF FINFET TRANSISTORS	DATE:2013-06-18
Intel release its own eDRAM module.  As we learned from the report of the company for its manufacture will be used the same 22-nm HKMG-process as for the production of processors (the differences are in the materials for the insulator and gate). The multilayer structure of crystals with nine metal layers allow  to arrange one of the layers to maintain the charge capacity - the insulator layer is surrounded by two layers of metal foil.  Managing eDRAM memory cell transistor is the same in structure FinFET-transistor as the active element in the logic of Haswell.  Intel does not have to invent anything - the decision came an elegant and simple in its own way.  Thus in the memory transistor can operate at a voltage that in 0.75-1 significantly lower power common memory. EDRAM cell area at the 22-nm process technology, reduced to 0,029 square meters.  um.  SRAM cell area in the same process technology, is 0,092 square meters.   - is three times more.  That is eDRAM is much denser and energy-efficient usual cache. This kind of technology was made by IBM.  The cell eDRAM IBM slightly smaller area than the cell eDRAM Intel and is 0,026 square meters.  um.  This is due to the fact that the cells have an in-depth capacitors  - they are smaller in size in the section.  At the same time, according to Intel, they have the same density - about 17.5 Mbits / m.  mm. Intel company  has another distinct advantage.  Its eDRAM is already in mass production.   Related Products :

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