IBM has continued experiments with graphene. The thickness of this material is equal to one atom and has a conductivity of electrons is many times better than silicon. However, many problems remain with the inclusion of graphene in a traditional CMOS process technology. First, it is easy to damage. Secondly, it does not stay on the substrate and on a microscopic level it is not so easy to glue.
Recall the summer of 2011, IBM demonstrated a working model of the mixer frequency to a single transistor with graphene channel. The circuit transistor operated at a frequency of 10 GHz. The company noted that the operating parameters of the transistor could be better. Graphene device performance significantly worsened imperfect production technology. To date, the company developed a manufacturing process that does not lead to a deterioration of parameters. This allowed the claim that the new channel transistors from graphene demonstrate the true potential of promising material. They were in a 10 thousand (!) Times more productive than the previous experimental solutions.
As proof of the successful development of new technology, IBM demonstrated a 200-mm plate with RF circuits based on graphene FETs. The circuit comprises three transistors, four coils, two capacitors and two resistors. Each unit occupies a surface area of 0.6 m. mm. Miniature transmitter with radio path of graphene transistors (made of graphene only channel FETs) successfully transmitted over the radio frequency of 4.3 GHz signal text, which was encrypted name of the company: (IBM).
Whether it comes to processors? Obviously, it comes. But it will not be soon. At first channel transistors from graphene is tempting to use a miniature radio frequency circuits. HPC consume significantly less than pure silicon circuits. And, of course, the development of IBM immediately go to the main sponsor of the project - DARPA organization . Related Products :
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