Like many other leaders of the semiconductor market, IBM is exploring the possibility of non-volatile memory such as a memory-effect reversible change of state of matter - phase change memory (PCM). Under the influence of high current in the cell substance changes state to an amorphous, that corresponds to the "0" and smaller cell currents return to the crystalline state (current carrying capacity), responsible for the recording of "1." Very small currents can determine the phase state of the material and actually consider the recorded data. Development of the PCM memory, IBM has been since the beginning of the 2000s, developing networks in its time, for example, with Infineon and Macronix.
Not so long ago, IBM showed a prototype of the first non-volatile storage with PCI Express bus based memory PCM. The demonstration took place at the event, Non-Volatile Memory Workshop, 2014. Board memory does not look great in a modern way.
Most valuable in the prototype PCM-drive IBM - is obtained in the test results comparing the performance of modern SSD flash memory NAND-type and PCIe-storage memory on phase states of matter. Scientific partners of IBM from the Greek city of Patras University found that speed access to the data behind the corporate SSD drives PCM-12 times, and client SSD are slower to 275 times.. Thus, the average cell PCM withstand up to 10 million rewrites. If this error correction mechanism used, the wear resistance can be increased to 10 trillion. erase operations.
Practical results of other experts have found that released under the 90-nm PCM-memory IBM at 66 MHz writes "0" for 70 ns, and the "1" - 120 ns. On their speed characteristics PCM memory is approaching normal operational capabilities DRAM-memory, but it does not lose data when the power is off. Because of the low capacity of modern chips PCM is believed that in the beginning they will be the basis for the creation of non-volatile cache buffers comprising SSD and only later will drive business entirely based on PCM-chips. Related Products :
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