Scientists have developed fastest FET

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POSTER: computer news   ||   SCIENTISTS HAVE DEVELOPED FASTEST FET	DATE:2014-06-16
Scientists from the University of California at Santa Barbara managed to get a MOSFET, the performance of which exceeds the corresponding figures of silicon analogues.  The instrument is made of materials such as III-V - these include chemical compounds which include at least one element of the third group and at least one element of the fifth group, - grown on a silicon substrate. On a substrate of silicon scientists put indium phosphide (InP), on top of which was deposited indium gallium arsenide (InGaAs).  The resulting transistor has higher performance than silicon analogue of comparable size, while using less energy.  Although the researchers did not measure speed switching, they believe that "III-V-transistor" is 30-60% faster than silicon RF transistors.  In addition, electron mobility in the indium and arsenic compounds 2.5-3 times higher than silicon, and thus the device can operate at much higher frequencies. Note that transistors based on III-V semiconductors, in particular, gallium arsenide, indium scientists created previously.  Meanwhile, the California researchers used several key improvements in device design.  First, the transistors are formed is extremely thin (about 2.5 nm) semiconductor channels, which improves the current characteristics of the device.  Second, as an insulator between gate and semiconductor layers used alumina (Al 2 O 3) and zirconium oxide (ZrO 2) with a high dielectric constant.  Thirdly, the vertical transistor used spacer layer more smoothly within the dispensing device and the field reduces leakage currents.   Scientists believe that their invention will extend Moore's Law and make more efficient computing devices.   Related Products :

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